c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 www. ruichips .com ru 30 4 0 m n - channel advanced power mosfet mosfet features pin description applications symbol parameter ratin g unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 40 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 16 0 a t c =25 c 4 0 t c =100 c 23 a t a =25 c 1 3 i d continuous drain current ( v gs =10v) t a = 7 0 c 1 0.6 t c =25 c 31 t c =100 c 12.5 w t a =25 c 4.2 p d maximum power dissipation t a = 7 0 c 2.7 ? 3 0 v/ 40 a, r ds ( on ) = 12 m ( tpy.)@ v gs =10 v r ds ( on ) = 17. 5 m ( tpy.)@ v gs = 4.5 v ? super high dense cell design ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? dc/dc conversion ? switching application absolute maximum ratings n - channel mosfe t pdfn 5x6
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 2 www. ruichips .com ru 30 4 0 m mounted on large heat sink r q jc thermal resistance - junction to case 4 c /w r q j a thermal resistance - junction to ambient 30 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 30 m j electrical characteristics ( t c =25 c unless otherwise noted) ru 30 4 0 m symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 3 0 v v ds = 3 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 2 2.5 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a v gs = 10 v, i ds = 20 a 12 14 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 20 a 17. 5 25 m w d iode characteristics v sd diode forward voltage i sd = 2 0 a, v gs =0v 1. 2 v t rr reverse recovery time 12 ns q rr reverse recovery charge i sd = 20 a, dl sd /dt=100a/ m s 18 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 6 w c iss input capacitance 6 7 0 c oss output capacitance 1 8 0 c rss reverse transfer capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 7 5 pf t d ( on ) turn - on delay t ime 5 t r turn - on rise time 1 0 t d ( off ) turn - off delay time 1 5 t f turn - off fall time v dd = 15 v, r l = 0 . 7 5 w , i ds = 20 a, v gen =10v, r g = 3 w 4 ns gate charge characteristics q g total gate charge 12 q gs gate - source char ge 3 q gd gate - drain charge v ds = 24 v, v gs =10v, i ds = 20 a 4 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 3 www. ruichips .com ru 30 4 0 m notes : max cu rrent is limited by the source bonding . pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . limited by t jmax , i as = 11 a, v dd = 24 v, r g = 50 , sta rting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . ordering and marking information device marking package packaging quantity reel size tape width ru 30 4 0 m ru 30 4 0 m pdfn 5x6 tap e&reel 3000 13 12mm
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 4 www. ruichips .com ru 30 4 0 m typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 5 www. ruichips .com ru 30 4 0 m typical chara cteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 6 www. ruichips .com ru 30 4 0 m typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 7 www. ruichips .com ru 30 4 0 m avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 8 www. ruichips .com ru 30 4 0 m package information pdfn 5x6 all dimens ions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.030 1.170 0.040 0.046 e2 1.600 - 0.063 - b 0.340 0.480 0.013 0.019 e 1.270 bsc 0.050 bsc c 0.824 0.970 0.032 0.038 l 0.050 0.250 0.002 0.010 d 4.80 0 5.400 0.189 0.213 l1 0.380 0.500 0.015 0.020 d1 4.110 4.310 0.162 0.170 l2 0.380 0.500 0.015 0.020 d2 4.800 5.000 0.189 0.197 h 3.500 3.700 0.138 0.146 e 5.950 6.150 0.234 0.242 i - 0.180 - 0.007 e1 5.650 5.850 0.222 0.230
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 9 www. ruichips .com ru 30 4 0 m customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
|
